Vishay TrenchFET SI8824EDB-T2-E1 N-Kanal, SMD MOSFET 20 V / 2.9 A, 4-Pin MICRO FOOT

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 5V. It has drain-source resistance of 75mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 900mW. The minimum and a maximum driving voltage for this transistor are 1.2V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• Space efficient
• TrenchFET power MOSFET
• Typical ESD protection 2000V (HBM)

• Load switch for 1.2V, 1.5V, and 1.8V power lines
• Load switch with low voltage drop
• Small signal and high speed switching
• Ultraportable and wearable devices

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007